An underlap field-effect transistor for electrical detection of influenza
نویسندگان
چکیده
Kwang-Won Lee, Sung-Jin Choi, Jae-Hyuk Ahn, Dong-Il Moon, Tae Jung Park, Sang Yup Lee, and Yang-Kyu Choi School of Electrical Engineering and Computer Science, Division of Electrical Engineering, KAIST, Daejeon 305-701, Republic of Korea BioProcess Engineering Research Center, Center for Systems and Synthetic Biotechnology, and Institute for the BioCentury, KAIST, Daejeon 305-701, Republic of Korea Department of Bio and Brain Engineering, Department of Biological Sciences, and Bioinformatics Research Center, KAIST, Daejeon 305-701, Republic of Korea
منابع مشابه
Extended-Gate Field-Effect Transistor based Sensor for Detection of Hyoscine N-Butyl Bromide in its Pharmaceutical Formulation
A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the exte...
متن کاملSurface engineering for enhancement of sensitivity in an underlap-FET biosensor by control of wettability.
The present work aims to improve the sensitivity of an electrical biosensor by simply changing a surface property of the passivation layer, which covers the background region except for the sensing site for electrical isolation among adjacent interconnection lines. The hydrophobic passivation layer dramatically enhances the sensitivity of the biosensor when compared with a hydrophilic passivati...
متن کاملPerformance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor
In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...
متن کاملNovel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010